423-800215

Technical Characteristics

• Internal Configuration

  field effect all transistor

• Terminal Circle Diameter

  0.100 inches nominal all transistor

• Terminal Type And Quantity

  4 uninsulated wire lead all transistor

• Component Function Relationship

  matched

• Current Rating Per Characteristic

  50.00 milliamperes source cutoff current minor all transistor

• Semiconductor Material

  silicon all transistor

• Channel Polarity And Control Type (Non-Core)

  n-channel junction type 1st transistor

• Voltage Rating In Volts Per Characteristic

  50.0 maximum drain to gate voltage 1st transistor and 50.0 maximum forward gate to source voltage 1st transistor

• Overall Length

  0.210 inches maximum all transistor

• Inclosure Material

  metal all transistor

• Channel Polarity And Control Type (Non-Core)

  p-channel junction type 2nd transistor

• Component Name And Quantity

  2 transistor

• Overall Diameter

  0.209 inches minimum all transistor and 0.230 inches maximum all transistor

• Terminal Length

  0.500 inches minimum all transistor

• Voltage Rating In Volts Per Characteristic

  40.0 maximum drain to gate voltage 2nd transistor and 40.0 maximum forward gate to source voltage 2nd transistor

• Power Rating Per Characteristic

  300.0 milliwatts small-signal input power, common-collector absolute all transistor

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction all transistor

• Mounting Method

  terminal all transistor