3166129-1

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Terminal Circle Diameter

  0.200 inches maximum

• Mounting Method

  terminal

• Power Rating Per Characteristic

  300.0 milliwatts maximum total device dissipation all transistor

• Overall Length

  0.260 inches maximum

• Maximum Operating Temp Per Measurement Point

  55.0 deg celsius ambient air

• Special Features

  matched to within 5.5 millivolts over a temperature range of -30c to +55c.

• Overall Diameter

  0.370 inches maximum

• Features Provided

  burn in and hermetically sealed case

• Terminal Length

  0.500 inches minimum

• Component Name And Quantity

  2 transistor

• Terminal Type And Quantity

  6 uninsulated wire lead

• Voltage Rating In Volts Per Characteristic

  -50.0 minimum breakdown voltage, gate-to-source, with all other terminals short-circuited to source all transistor and -0.7 minimum peak-point voltage all transistor and -4.0 maximum peak-point voltage all transistor

• Inclosure Material

  metal