2N3747

Semiconductor Devices and Associated Hardware

TRANSISTOR

2N3747

5961-00-241-3417

5961 - Semiconductor Devices and Associated Hardware

Joint Electron Device Engineering

TRANSISTOR

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Technical Characteristics

  • Current Rating Per Characteristic

    5.00 amperes source cutoff current minimum and 10.00 amperes source cutoff current maximum

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Specification/Standard Data

    80131-release5412 professional/industrial association specification

  • Power Rating Per Characteristic

    65.0 watts small-signal input power, common-collector absolute

  • Overall Height

    0.450 inches maximum

  • Voltage Rating In Volts Per Characteristic

    120.0 maximum collector to base voltage/static/emitter open and 100.0 maximum collector to emitter voltage/static/base open and 8.0 maximum emitter to base voltage, static, collector open

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Electrode Internally-Electrically Connected To Case

    collector

  • Overall Length

    1.573 inches maximum

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Overall Width

    1.050 inches maximum

  • Semiconductor Material

    silicon

  • Mounting Facility Quantity

    2

  • Terminal Type And Quantity

    2 uninsulated wire lead and 1 case

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

Certified to
AS6081 Methods

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