CB1139
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
CB1139
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Terminal Circle Diameter
0.100 inches nominal
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Inclosure Material
metal
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Terminal Length
0.500 inches minimum
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Special Features
junction pattern arrangement: pnpn
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Function For Which Designed
switching
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Overall Diameter
0.210 inches minimum and 0.225 inches maximum
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Overall Length
0.200 inches nominal
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Internal Configuration
junction contact
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Current Rating Per Characteristic
30.00 amperes source cutoff current outside diameter and 25.00 milliamperes emitter current, dc megawatts
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Voltage Rating In Volts Per Characteristic
500.0 maximum forward voltage, peak and 6.0 maximum reverse gate to source voltage and 150.0 maximum reverse voltage, peak
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air