192008P13

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

192008P13

5961-00-244-8470

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Information And

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Overall Diameter

    0.230 inches maximum

  • Voltage Rating In Volts Per Characteristic

    5.0 maximum reverse gate to source voltage

  • Precious Material

    gold

  • Precious Material And Location

    terminal surfaces gold

  • Internal Configuration

    junction contact

  • Features Provided

    hermetically sealed case

  • Overall Length

    0.210 inches maximum

  • Semiconductor Material

    silicon

  • Power Rating Per Characteristic

    0.42 watts small-signal input power, common-collector outside diameter

  • Special Features

    junction pattern arrangement: pnpn

  • Maximum Operating Temp Per Measurement Point

    100.0 deg celsius ambient air

  • Terminal Length

    0.500 inches minimum

  • Unpackaged Unit Weight (Non-Core)

    1.0 grams

  • Inclosure Material

    glass and metal

  • Current Rating Per Characteristic

    250.00 milliamperes forward current, total rms universal

  • Terminal Circle Diameter

    0.100 inches nominal

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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