352-0892-010
Semiconductor Devices and Associated Hardware
TRANSISTOR
352-0892-010
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Mounting Facility Quantity
1
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Channel Polarity And Control Type
n-channel junction type
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Overall Width Across Flats
0.437 inches maximum
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Nominal Thread Size
0.190 inches
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Voltage Rating In Volts Per Characteristic
m25.0 maximum gate to source voltage and 25.0 maximum drain to source voltage
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Current Rating Per Characteristic
800.00 milliamperes maximum drain current
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Power Rating Per Characteristic
15.0 watts maximum total device dissipation
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Precious Material And Location
terminals gold
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Terminal Type And Quantity
1 threaded stud and 3 uninsulated wire lead
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Overall Length
0.933 inches maximum
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Internal Configuration
field effect
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-60
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Precious Material
gold
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Thread Series Designator
unf