BACSH1N1
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
BACSH1N1
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unf
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Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector preset
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Electrode Internally-Electrically Connected To Case
anode
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Terminal Type And Quantity
1 tab, solder lug
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Current Rating Per Characteristic
30.00 amperes forward current, average peak
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Voltage Rating In Volts Per Characteristic
5.5 maximum breakover voltage, dc
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Overall Diameter
0.667 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Length
1.453 inches nominal
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Nominal Thread Size
0.250 inches
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Test Data Document
81205-bacsh1n drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Reference Number Differentiating Characteristics
selected item in accordance with boeing drawing bacsh1n
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Overall Width
0.688 inches nominal