R4BW501

Technical Characteristics

• Mounting Method

  threaded stud

• Voltage Rating In Volts Per Characteristic

  40.0 maximum collector to emitter voltage/static/base open and 55.0 maximum collector to base voltage/static/emitter open and 3.5 maximum emitter to base voltage, static, collector open

• Overall Length

  0.185 inches maximum

• Mounting Facility Quantity

  1

• Thread Series Designator

  unc

• Precious Material And Location

  terminal surface gold

• Precious Material

  gold

• Current Rating Per Characteristic

  2.00 amperes source cutoff current maximum

• Internal Configuration

  junction contact

• Special Features

  junction pattern arrangement: npn

• Features Provided

  hermetically sealed case

• Overall Diameter

  0.375 inches maximum

• Semiconductor Material

  silicon

• Nominal Thread Size

  0.164 inches

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Inclosure Material

  metal

• Power Rating Per Characteristic

  18.0 watts small-signal input power, common-collector preset

• Terminal Type And Quantity

  4 uninsulated wire lead