3N120
Semiconductor Devices and Associated Hardware
TRANSISTOR
3N120
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Electrode Internally-Electrically Connected To Case
collector
-
Mounting Method
terminal
-
Overall Diameter
0.230 inches maximum
-
Specification/Standard Data
80131-release5127 professional/industrial association specification
-
Power Rating Per Characteristic
200.0 milliwatts small-signal input power, common-collector minimum
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Current Rating Per Characteristic
10.00 milliamperes source cutoff current maximum
-
Features Provided
hermetically sealed case
-
Overall Length
0.210 inches maximum
-
Semiconductor Material
silicon
-
Terminal Circle Diameter
0.100 inches nominal
-
Terminal Type And Quantity
4 uninsulated wire lead
-
Inclosure Material
metal
-
Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 20.0 maximum breakdown voltage, emitter-to-base, collector open
-
Terminal Length
0.500 inches minimum