BACSH1G1
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
BACSH1G1
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Current Rating Per Characteristic
16.00 amperes forward current, average absolute and 150.00 amperes peak forward surge current absolute
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Special Features
design analysis; junction pattern arrangement: pnpn
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Thread Series Designator
unf
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Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
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Specification/Standard Data
81349-mil-prf-19500/108 government specification
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Overall Width Across Flats
0.544 inches minimum and 0.563 inches maximum
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
300.0 maximum repetitive peak reverse voltage and 400.0 maximum nonrepetitive peak reverse voltage and 5.0 maximum peak gate voltage
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Overall Length
1.646 inches maximum
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Inclosure Material
metal
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Nominal Thread Size
0.250 inches
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~1
type data on certain environmental and performa
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Test Data Document
81349-mil-prf-19500 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general