2N5680
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5680
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage, collector-to-base, emitter open and 120.0 maximum breakdown voltage, collector-to-emitter, base open and 4.0 maximum breakdown voltage, emitter-to-base, collector open
-
Electrode Internally-Electrically Connected To Case
collector
-
Terminal Type And Quantity
3 uninsulated wire lead
-
Mounting Method
terminal
-
Terminal Circle Diameter
0.200 inches nominal
-
Special Features
junction pattern arrangement: pnp
-
Overall Length
0.260 inches maximum
-
Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector minimum
-
Overall Diameter
0.370 inches maximum
-
Internal Configuration
junction contact
-
Features Provided
hermetically sealed case
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
-
Semiconductor Material
silicon
-
Terminal Length
1.500 inches minimum
-
Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
-
Inclosure Material
metal
-
Current Rating Per Characteristic
500.00 milliamperes source cutoff current minimum and 1.00 amperes source cutoff current maximum