2N5680L
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5680L
5961 - Semiconductor Devices and Associated Hardware
Microsemi Corp. - Massachusetts
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage, collector-to-base, emitter open and 120.0 maximum breakdown voltage, collector-to-emitter, base open and 4.0 maximum breakdown voltage, emitter-to-base, collector open
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Special Features
junction pattern arrangement: pnp
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Overall Length
0.260 inches maximum
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector minimum
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Overall Diameter
0.370 inches maximum
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5
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Semiconductor Material
silicon
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Terminal Length
1.500 inches minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current minimum and 1.00 amperes source cutoff current maximum