L01395
Semiconductor Devices and Associated Hardware
TRANSISTOR
L01395
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Mounting Facility Quantity
2
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Mounting Method
unthreaded hole
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Features Provided
hermetically sealed case
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Criticality Code Justification
feat
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage,collector-to-base,emitter open and 7.0 maximum breakdown voltage,emitter-to-base,collector open and 60.0 maximum breakdown voltage,collector-to-emitter,base open
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Current Rating Per Characteristic
1.00 amperes maximum collector current,dc and 2.00 amperes maximum base current,dc
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Power Rating Per Characteristic
25.0 watts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Special Features
item must comply with rqmt of desc production std no. l01395
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Overall Length
0.340 inches maximum
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Overall Diameter
0.500 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-66
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Internal Junction Configuration
pnp
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case