2N5132

Technical Characteristics

• Terminal Circle Diameter

  0.100 inches nominal

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  30.00 milliamperes maximum collector current, dc

• Power Rating Per Characteristic

  200.0 milliwatts maximum collector power dissipation

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius junction

• Special Features

  junction pattern arrangement: npn

• Terminal Type And Quantity

  4 uninsulated wire lead

• Inclosure Material

  plastic

• Overall Length

  0.240 inches maximum

• Terminal Length

  0.500 inches minimum

• Overall Diameter

  0.222 inches maximum

• Mounting Method

  terminal

• Voltage Rating In Volts Per Characteristic

  20.0 maximum breakdown voltage, collector-to-base, emitter open and 20.0 maximum breakdown voltage, collector-to-emitter, base open and 3.0 maximum breakdown voltage, emitter-to-base, collector open

• Specification/Standard Data

  80131-release5546 professional/industrial association specification