2N3065
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N3065
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Circle Diameter
0.100 inches nominal
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
110.0 maximum breakdown voltage, collector-to-base, emitter open and 100.0 maximum breakdown voltage, collector-to-emitter, base open and 50.0 maximum breakdown voltage, emitter-to-base, collector open
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Length
0.500 inches minimum
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Semiconductor Material
silicon
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Internal Configuration
junction contact
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Current Rating Per Characteristic
100.00 milliamperes source cutoff current maximum
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Power Rating Per Characteristic
400.0 milliwatts small-signal input power, common-collector minimum
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Special Features
junction pattern arrangement: pnp
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Overall Length
0.065 inches minimum and 0.085 inches maximum
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead