2N5491
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N5491
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Electrode Internally-Electrically Connected To Case
collector
-
Mounting Facility Quantity
1
-
Overall Width
0.410 inches maximum
-
Power Rating Per Characteristic
50.0 watts small-signal input power, common-collector minimum
-
Overall Length
0.600 inches maximum
-
Maximum Operating Temp Per Measurement Point
165.0 deg celsius junction
-
Internal Configuration
junction contact
-
Special Features
junction pattern arrangement: npn
-
Features Provided
hermetically sealed case
-
Semiconductor Material
silicon
-
Voltage Rating In Volts Per Characteristic
50.0 maximum breakdown voltage, collector-to-emitter, base open and 60.0 maximum breakdown voltage, collector-to-base, emitter open and 5.0 maximum breakdown voltage, emitter-to-base, collector open
-
Overall Height
0.190 inches maximum
-
Mounting Method
unthreaded hole
-
Terminal Type And Quantity
3 pin
-
Inclosure Material
metal
-
Current Rating Per Characteristic
3.00 amperes source cutoff current minimum and 7.00 amperes source cutoff current maximum