SN5410N10

Technical Characteristics

• Test Data Document

  81349-mil-m-3510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performance

• Output Logic Form

  transistor-transistor logic

• Maximum Power Dissipation Rating

  120.0 milliwatts

• Inclosure Configuration

  dual-in-line

• Case Outline Source And Designator

  d-1 mil-m-38510

• Terminal Surface Treatment

  solder

• Overall Height

  0.400 inches maximum

• Inclosure Material

  ceramic

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Height

  0.140 inches minimum and 0.185 inches maximum

• Design Function And Quantity

  3 gate, nand

• Features Provided

  hermetically sealed and burn in and monolithic and positive outputs

• Body Length

  0.785 inches maximum

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Time Rating Per Chacteristic

  27.00 nanoseconds maximum propagation delay time, low to high level output and 24.00 nanoseconds maximum propagation delay time, high to low level output

• Terminal Type And Quantity

  14 printed circuit

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Specification/Standard Data

  81349-mil-m-38510/1 government specification

• Input Circuit Pattern

  triple 3 input