MIS-14150/66

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICES,UNITIZED

MIS-14150/66

5961-00-327-1881

5961 - Semiconductor Devices and Associated Hardware

U S Army Aviation And Missile

SEMICONDUCTOR DEVICES,UNITIZED

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Technical Characteristics

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Power Rating Per Characteristic

    500.0 milliwatts maximum total device dissipation all transistor

  • Current Rating Per Characteristic

    50.00 milliamperes maximum gate current all transistor

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum drain to gate voltage all transistor and 50.0 maximum drain to source voltage and 50.0 maximum gate to source voltage

  • Semiconductor Material

    silicon all transistor

  • Terminal Circle Diameter

    0.100 inches nominal

  • Component Name And Quantity

    2 transistor

  • Channel Polarity And Control Type

    n-channel junction type all transistor

  • Overall Diameter

    0.230 inches maximum

  • Terminal Length

    1.500 inches minimum

  • Overall Length

    0.210 inches maximum

  • Terminal Type And Quantity

    6 uninsulated wire lead

  • Mounting Method

    terminal

  • Internal Configuration

    field effect all transistor

  • Inclosure Material

    metal

Certified to
AS6081 Methods

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