JAN2N2151

Semiconductor Devices and Associated Hardware

TRANSISTOR

JAN2N2151

5961-00-327-8820

5961 - Semiconductor Devices and Associated Hardware

Texas Instruments Incorporated

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Technical Characteristics

  • Semiconductor Material

    silicon

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Facility Quantity

    1

  • Nominal Thread Size

    0.190 inches

  • Voltage Rating In Volts Per Characteristic

    125.0 maximum breakdown voltage, collector-to-base, emitter open and 80.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Current Rating Per Characteristic

    1.00 amperes maximum base current, dc and 2.00 amperes maximum collector current, dc

  • Power Rating Per Characteristic

    30.0 watts maximum collector power dissipation

  • Special Features

    itmem must comply with requirements of desc production standard no. l01403; for navy nuclear propulsion plant products only; junction pattern arrangement: npn

  • Thread Series Designator

    unf

  • Terminal Type And Quantity

    4 tab, solder lug

  • Inclosure Material

    metal

  • Overall Length

    0.672 inches nominal

  • Overall Diameter

    0.505 inches maximum

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Method

    threaded stud

  • Features Provided

    hermetically sealed case

  • Overall Width Across Flats

    0.437 inches maximum

  • Criticality Code Justification

    feat

Certified to
AS6081 Methods

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