PT8966-3
Semiconductor Devices and Associated Hardware
TRANSISTOR
PT8966-3
5961 - Semiconductor Devices and Associated Hardware
Trw Electronics And Defense Sector
TRANSISTOR
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Technical Characteristics
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Overall Length
0.468 inches maximum
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Overall Width Across Flats
0.437 inches maximum
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Nominal Thread Size
0.190 inches
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Semiconductor Material
silicon
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Current Rating Per Characteristic
10.00 amperes maximum collector current, dc and 2.00 amperes maximum base current, dc
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Thread Series Designator
unf
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Inclosure Material
metal
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Overall Diameter
0.380 inches maximum
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Mounting Facility Quantity
1
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Mounting Method
threaded stud
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Voltage Rating In Volts Per Characteristic
80.0 maximum collector to emitter voltage/static/base open and 100.0 maximum collector to base voltage/static/emitter open and 5.0 maximum emitter to base voltage, static, collector open
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Power Rating Per Characteristic
30.0 watts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Terminal Type And Quantity
3 tab, solder lug