DF60526T
Semiconductor Devices and Associated Hardware
TRANSISTOR
DF60526T
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Voltage Rating In Volts Per Characteristic
20.0 maximum breakdown voltage, dc and 1.5 maximum gate to source voltage and 6.0 maximum gate to source cutoff voltage
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Channel Polarity And Control Type (Non-Core)
n-channel junction type
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Current Rating Per Characteristic
30.00 nanoamperes zero-gate-voltage source current watts
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Features Provided
hermetically sealed case
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius ambient air
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Semiconductor Material
silicon
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Power Rating Per Characteristic
300.0 milliwatts small-signal input power, common-collector absolute
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Terminal Length
0.500 inches minimum
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Internal Configuration
field effect
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Inclosure Material
metal
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-18
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Circle Diameter
0.100 inches nominal