DTS402

Semiconductor Devices and Associated Hardware

TRANSISTOR

DTS402

5961-00-350-1968

5961 - Semiconductor Devices and Associated Hardware

General Motors Corp

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Diameter

    0.875 inches maximum

  • Mounting Facility Quantity

    2

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    collector

  • Mounting Method

    unthreaded hole

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Terminal Type And Quantity

    2 uninsulated wire lead and 1 case

  • Overall Length

    0.450 inches maximum

  • Internal Junction Configuration

    npn

  • Voltage Rating In Volts Per Characteristic

    400.0 maximum breakdown voltage, collector-to-emitter, base open and 5.0 maximum breakdown voltage, emitter-to-base, collector open

  • Current Rating Per Characteristic

    2.00 amperes maximum base current, dc and 3.50 amperes maximum collector current, dc

  • Power Rating Per Characteristic

    100.0 watts maximum collector power dissipation

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

Certified to
AS6081 Methods

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