649A855H02
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
649A855H02
5961 - Semiconductor Devices and Associated Hardware
Northrop Grumman Systems Corporation
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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~1
d 1.20 amperes maximum forward current, maximum peak total value
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Semiconductor Material
silicon
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Nominal Thread Size
0.500 inches
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Features Provided
hermetically sealed case
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Mounting Method
threaded stud
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Internal Configuration
junction contact
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Overall Length
2.000 inches maximum
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Inclosure Material
metal
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Terminal Type And Quantity
1 threaded stud and 1 uninsulated wire lead and 1 uninsulated wire lead w/termin
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~1
al lug
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Thread Series Designator
unf
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Power Rating Per Characteristic
3.0 watts maximum peak gate power dissipation
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Current Rating Per Characteristic
1.00 amperes maximum average forward current averaged over a full 60-hz cycle an
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Internal Junction Configuration
pnpn
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Mounting Facility Quantity
1
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Overall Diameter
1.125 inches nominal