ITS56S470-413

Technical Characteristics

• Storage Temp Range

  m65.0/p150.0 deg celsius

• Inclosure Configuration

  dual-in-line

• Input Circuit Pattern

  6 input

• Word Quantity

  32

• Case Outline Source And Designator

  m0-001-ag joint electron device engineering council

• Time Rating Per Chacteristic

  70.00 nanoseconds maximum propagation delay time,low to high level output

• Unpackaged Unit Weight

  2.2 grams

• Body Length

  0.750 inches minimum and 0.795 inches maximum

• Body Width

  0.245 inches minimum and 0.300 inches maximum

• Body Height

  0.150 inches minimum and 0.180 inches maximum

• Maximum Power Dissipation Rating

  525.0 milliwatts

• Operating Temp Range

  m55.0/p125.0 deg celsius

• Features Provided

  hermetically sealed and monolithic and positive outputs and programmable and programmed and w/enable and bipolar and w/open collector

• Inclosure Material

  ceramic and glass

• Output Logic Form

  transistor-transistor logic

• Bit Quantity

  256

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  m1.5 volts maximum power source and 5.5 volts maximum power source

• Memory Device Type

  rom

• Test Data Document

  07187-4005908 drawing

• Terminal Type And Quantity

  16 printed circuit