54H00DMQB

Technical Characteristics

• Time Rating Per Chacteristic

  2.00 nanoseconds minimum propagation delay time, high to low level output and 2.00 nanoseconds minimum propagation delay time, low to high level output and 15.00 nanoseconds maximum propagation delay time, low to high level output and 16.00 nanoseconds

• Inclosure Material

  ceramic and glass

• Inclosure Configuration

  dual-in-line

• Output Logic Form

  transistor-transistor logic

• Maximum Power Dissipation Rating

  792.0 milliwatts

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc

• ~1

  maximum propagation delay time, high to low lev

• Case Outline Source And Designator

  d-1 mil-m-38510

• Terminal Surface Treatment

  solder

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Height

  0.140 inches minimum and 0.185 inches maximum

• Features Provided

  hermetically sealed and positive outputs and high speed and monolithic and w/totem pole output

• Specification/Standard Data

  81349-mil-m-38510/23 government specification

• Design Function And Quantity

  4 gate, nand

• Body Length

  0.785 inches maximum

• Voltage Rating And Type Per Characteristic

  -1.5 volts maximum power source and 5.5 volts maximum power source

• Input Circuit Pattern

  quad 2 input

• Terminal Type And Quantity

  14 printed circuit

• Operating Temp Range

  -55.0/+125.0 deg celsius