RB54H00W

Technical Characteristics

• Time Rating Per Chacteristic

  10.00 nanoseconds maximum propagation delay time, low to high level output and 10.00 nanoseconds maximum propagation delay time, high to low level output

• Case Outline Source And Designator

  t0-86 joint electron device engineering council

• Output Logic Form

  transistor-transistor logic

• Maximum Power Dissipation Rating

  88.0 milliwatts

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  high speed and monolithic and hermetically sealed and positive outputs and darlington-connected

• Inclosure Configuration

  flat pack

• Body Width

  0.240 inches minimum and 0.260 inches maximum

• Input Circuit Pattern

  quad 2 input

• Precious Material

  gold

• Precious Material And Location

  terminals gold

• Test Data Document

  96906-mil-std 883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Design Function And Quantity

  4 gate, nand

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Length

  0.240 inches minimum and 0.275 inches maximum

• Body Height

  0.030 inches minimum and 0.070 inches maximum

• Inclosure Material

  ceramic and glass