P1087E

Semiconductor Devices and Associated Hardware

TRANSISTOR

P1087E

5961-00-370-2261

5961 - Semiconductor Devices and Associated Hardware

Joint Electron Device Engineering

TRANSISTOR

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Technical Characteristics

  • Terminal Circle Diameter

    0.100 inches nominal

  • Voltage Rating In Volts Per Characteristic

    30.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 30.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source

  • Inclosure Material

    metal

  • Internal Configuration

    field effect

  • Terminal Length

    0.500 inches minimum

  • Power Rating Per Characteristic

    300.0 milliwatts small-signal input power, common-collector absolute

  • Channel Polarity And Control Type (Non-Core)

    p-channel junction type

  • Overall Length

    0.200 inches maximum

  • Semiconductor Material

    silicon

  • Features Provided

    hermetically sealed case

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius junction

  • Overall Diameter

    0.210 inches maximum

  • Current Rating Per Characteristic

    10.00 milliamperes source cutoff current minor

  • Mounting Method

    terminal

  • Terminal Type And Quantity

    3 uninsulated wire lead

Certified to
AS6081 Methods

Implementing Quality Procurement

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