F500-12BP
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
F500-12BP
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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~1
trigger voltage, dc
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Power Rating Per Characteristic
16.0 watts small-signal input power, common-collector blank
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Inclosure Material
metal
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Mounting Method
press fit
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Special Features
gate wire leads to betwisted and 30.000 in. lg; junction pattern arrangement: pnpn
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Semiconductor Material
silicon
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Overall Diameter
2.200 inches maximum
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
gate
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Overall Length
1.050 inches maximum
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Terminal Type And Quantity
2 ferrule and 2 uninsulated wire lead
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Current Rating Per Characteristic
500.00 milliamperes forward current, total rms peak and 5000.00 amperes forward current, average preset and 250.00 milliamperes forward current, total rms preset and 350.00 amperes forward current, total rms megahertz
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Voltage Rating In Volts Per Characteristic
5.0 maximum peak negative gate voltage and 1.85 maximum forward voltage, peak and 1300.0 maximum nonrepetitive peak reverse voltage, maximum peak total value and 1200.0 maximum repetitive peak reverse voltage, maximum peak total value and 3.5 maximum gate