DMS 85099B

Technical Characteristics

• Terminal Circle Diameter

  0.190 inches minimum all transistor and 0.210 inches maximum all transistor

• Component Function Relationship

  matched

• Electrode Internally-Electrically Connected To Case

  collector all transistor

• Terminal Type And Quantity

  3 uninsulated wire lead all transistor

• Power Rating Per Characteristic

  4.0 watts small-signal input power, common-collector absolute all transistor

• Semiconductor Material

  silicon all transistor

• Voltage Rating In Volts Per Characteristic

  8.0 maximum emitter to base voltage, dc all transistor and 60.0 maximum collector to base voltage, dc all transistor and 60.0 maximum collector to emitter saturation voltage all transistor

• Overall Diameter

  0.370 inches maximum all transistor

• Internal Junction Configuration

  npn all transistor

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-5 all transistor

• Internal Configuration

  junction contact all transistor

• Transfer Ratio

  30.0 minimum static forward current transfer ratio, common-emitter all transistor and 90.0 maximum static forward current transfer ratio, common-emitter all transistor

• Inclosure Material

  metal all transistor

• Terminal Length

  1.500 inches minimum all transistor

• Component Name And Quantity

  2 transistor

• Current Rating Per Characteristic

  10.00 microamperes zero-gate-voltage source current preset all transistor

• Overall Length

  0.233 inches minimum all transistor and 0.260 inches maximum all transistor

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction all transistor

• Mounting Method

  terminal all transistor