JAN2N869A
Semiconductor Devices and Associated Hardware
TRANSISTOR
JAN2N869A
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Precious Material And Location
terminal surfaces gold
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Precious Material
gold
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Special Features
junction pattern arrangement: pnp
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Overall Diameter
0.230 inches maximum
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead
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Electrode Internally-Electrically Connected To Case
collector
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Voltage Rating In Volts Per Characteristic
-25.0 maximum collector to base voltage/static/emitter open and -18.0 maximum collector to emitter voltage/static/base open and -5.0 maximum emitter to base voltage, static, collector open
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Terminal Circle Diameter
0.100 inches nominal
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Overall Length
0.190 inches maximum
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Terminal Length
0.625 inches minimum
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector minimum
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Semiconductor Material
silicon
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Current Rating Per Characteristic
200.00 milliamperes source cutoff current maximum
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Features Provided
hermetically sealed case
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Test Data Document
96214-535305 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Internal Configuration
junction contact