19-001F00M00R00

Technical Characteristics

• Features Provided

  hermetically sealed and positive outputs and monolithic and medium speed

• Time Rating Per Chacteristic

  50.00 nanoseconds maximum propagation delay time, low to high level output and 30.00 nanoseconds maximum propagation delay time, high to low level output

• Case Outline Source And Designator

  0-116 joint electron device engineering council

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Inclosure Material

  ceramic and glass

• Input Circuit Pattern

  dual 5 input

• Design Function And Quantity

  2 gate, nand-nor

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Body Height

  0.140 inches minimum and 0.180 inches maximum

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Body Width

  0.220 inches minimum and 0.280 inches maximum

• Output Logic Form

  diode-transistor logic

• Maximum Power Dissipation Rating

  200.0 milliwatts

• Inclosure Configuration

  dual-in-line

• Body Length

  0.660 inches minimum and 0.785 inches maximum