2N4305
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N4305
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Overall Diameter
0.370 inches maximum
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Internal Configuration
junction contact
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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Mounting Method
terminal
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Terminal Circle Diameter
0.210 inches maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
120.0 maximum breakdown voltage,collector-to-base,emitter open and 80.0 maximum breakdown voltage,collector-to-emitter,base open and 6.0 maximum breakdown voltage,emitter-to-base,collector open
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Power Rating Per Characteristic
1.0 watts maximum collector power dissipation
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Terminal Type And Quantity
3 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Current Rating Per Characteristic
2.50 amperes maximum collector current,dc
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Terminal Length
0.500 inches minimum
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Overall Length
0.260 inches maximum