535689-2
Semiconductor Devices and Associated Hardware
TRANSISTOR
535689-2
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Mounting Facility Quantity
1
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Electrode Internally-Electrically Connected To Case
base
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.138 inches
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-base, emitter open and 85.0 maximum breakdown voltage, collector-to-emitter, base open and 6.0 maximum breakdown voltage, emitter-to-base, collector open
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Power Rating Per Characteristic
25.0 watts maximum collector power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius ambient air
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Test Data Document
96214-535689 drawing
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Overall Length
0.195 inches maximum
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Overall Diameter
0.630 inches maximum
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Internal Configuration
junction contact
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Current Rating Per Characteristic
9.00 amperes maximum collector current, dc
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Special Features
junction pattern arrangement: npn
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Thread Series Designator
unc
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Terminal Type And Quantity
3 uninsulated wire lead