63A133593P4
Semiconductor Devices and Associated Hardware
TRANSISTOR
63A133593P4
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
-85.0 maximum breakdown voltage, collector to emitter, with specified voltage between base and emitter and -90.0 maximum collector to base voltage/static/emitter open and -65.0 maximum collector to emitter voltage/static/base open and -7.0 maximum emitter
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~1
to base voltage, static, collector open
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Length
1.500 inches minimum
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Internal Configuration
junction contact
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Overall Diameter
0.370 inches maximum
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Overall Length
0.260 inches maximum
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Special Features
junction pattern arrangement: pnp
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Current Rating Per Characteristic
-0.50 amperes source cutoff current minimum and -1.00 amperes source cutoff current maximum
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Terminal Circle Diameter
0.200 inches nominal
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead
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Electrode Internally-Electrically Connected To Case
collector
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Power Rating Per Characteristic
600.0 milliwatts small-signal input power, common-collector preset