2N4174
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N4174
5961 - Semiconductor Devices and Associated Hardware
Electronic Industries Association
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Overall Width Across Flats
0.437 inches maximum
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Overall Length
0.310 inches maximum
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Electrode Internally-Electrically Connected To Case
anode
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
600.0 maximum breakover voltage, dc
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Special Features
junction pattern arrangement: pnpn
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Specification/Standard Data
80131-release5221 professional/industrial association specification
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Inclosure Material
metal
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Power Rating Per Characteristic
500.0 milliwatts small-signal input power, common-collector blank
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Current Rating Per Characteristic
5.00 amperes source cutoff current maximum
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Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Nominal Thread Size
0.190 inches
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Maximum Operating Temp Per Measurement Point
100.0 deg celsius junction
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Thread Series Designator
unf