DMS 80064B
Semiconductor Devices and Associated Hardware
TRANSISTOR
DMS 80064B
5961 - Semiconductor Devices and Associated Hardware
Defense Electronics Supply Center
TRANSISTOR
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Technical Characteristics
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Current Rating Per Characteristic
1.00 milliamperes zero-gate-voltage source current torr and 0.01 milliamperes zero-gate-voltage source current horsepower metric
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Mounting Method
terminal
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Special Features
junction pattern arrangement: pnp
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Terminal Circle Diameter
0.100 inches nominal
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Terminal Type And Quantity
4 uninsulated wire lead
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Overall Length
0.210 inches nominal
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Internal Configuration
field effect
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Inclosure Material
glass and metal
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.230 inches nominal
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Channel Polarity And Control Type (Non-Core)
p-channel insulated gate type
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Power Rating Per Characteristic
250.0 milliwatts small-signal input power, common-collector preset
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Voltage Rating In Volts Per Characteristic
30.0 maximum forward gate to source voltage and 30.0 maximum drain to source voltage