SN15830J

Technical Characteristics

• ~1

  maximum propagation delay time, high to low l

• Design Function And Quantity

  2 gate, nand

• Output Logic Form

  diode-transistor logic

• Body Width

  0.220 inches minimum and 0.280 inches maximum

• Body Height

  0.140 inches minimum and 0.180 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Input Circuit Pattern

  dual 5 input

• Inclosure Material

  ceramic and glass

• Operating Temp Range

  +0.0/+75.0 deg celsius

• Body Length

  0.660 inches minimum and 0.785 inches maximum

• Inclosure Configuration

  dual-in-line

• Features Provided

  monolithic and expandable and hermetically sealed and positive outputs

• Case Outline Source And Designator

  t0-116 joint electron device engineering council

• Maximum Power Dissipation Rating

  26.0 milliwatts

• Time Rating Per Chacteristic

  10.00 nanoseconds minimum propagation delay time, high to low level output and 25.00 nanoseconds minimum propagation delay time, low to high level output and 80.00 nanoseconds maximum propagation delay time, low to high level output and 30.00 nanoseconds