DMS 81016B
Semiconductor Devices and Associated Hardware
TRANSISTOR
DMS 81016B
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Thread Series Designator
unc
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Special Features
junction pattern arrangement: npn
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Power Rating Per Characteristic
2.5 watts small-signal input power, common-collector minimum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Overall Length
0.285 inches maximum
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Nominal Thread Size
0.164 inches
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Current Rating Per Characteristic
4.00 amperes source cutoff current maximum
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Test Data Document
31550-515342 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Terminal Type And Quantity
4 ribbon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-emitter, base open and 70.0 maximum breakdown voltage, collector-to-base, emitter open and 70.0 maximum collector to emitter reverse voltage, with base short-circuited to emitter
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Overall Diameter
0.450 inches minimum and 0.500 inches maximum