334761-8

Technical Characteristics

• Precious Material And Location

  terminal surfaces gold

• Current Rating Per Characteristic

  3.00 microamperes zero-gate-voltage source current preset all transistor

• Terminal Type And Quantity

  3 uninsulated wire lead all transistor and 1 case all transistor

• Semiconductor Material

  silicon all transistor

• Internal Junction Configuration

  npn all transistor

• Test Data Document

  00752-334761 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Overall Width

  0.505 inches maximum all transistor

• Internal Configuration

  junction contact all transistor

• Overall Length

  1.003 inches maximum all transistor

• Inclosure Material

  metal all transistor

• Component Name And Quantity

  2 transistor

• Mounting Method

  unthreaded hole all transistor

• Power Rating Per Characteristic

  5.0 watts small-signal input power, common-collector preset all transistor

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction all transistor

• Mounting Facility Quantity

  2 all transistor

• Component Function Relationship

  matched

• Overall Height

  0.330 inches maximum all transistor

• Electrode Internally-Electrically Connected To Case

  collector all transistor

• Precious Material

  gold

• ~1

  emitter-to-base, collector open all transistor

• Voltage Rating In Volts Per Characteristic

  300.0 minimum breakdown voltage, collector-to-base, emitter open all transistor and 300.0 minimum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter all transistor and 5.0 minimum breakdown voltage,