2N682
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,THYRISTOR
2N682
5961 - Semiconductor Devices and Associated Hardware
Trw Electronics And Defense Sector
SEMICONDUCTOR DEVICE,THYRISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Internal Junction Configuration
pnpn
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Mounting Method
threaded stud
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Power Rating Per Characteristic
500.0 milliwatts maximum peak gate power dissipation
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius junction
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Overall Length
0.505 inches maximum
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Mounting Facility Quantity
1
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Overall Width Across Flats
0.562 inches maximum
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Nominal Thread Size
0.250 inches
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Voltage Rating In Volts Per Characteristic
50.0 maximum breakover voltage, dc
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Current Rating Per Characteristic
150.00 amperes maximum average forward current averaged over a full 60-hz cycle
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Test Data Document
11530-66-202450 drawing
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Thread Series Designator
unf
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Terminal Type And Quantity
2 tab, solder lug and 1 threaded stud