334762-2
Semiconductor Devices and Associated Hardware
TRANSISTOR
334762-2
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-base, emitter open and 15.0 maximum emitter to base voltage, dc and 1.5 maximum breakdown voltage, emitter-to-base, collector open
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Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector absolute
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Test Data Document
00752-334762 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
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Overall Diameter
0.260 inches maximum
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Current Rating Per Characteristic
50.00 milliamperes source cutoff current maximum
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Mounting Method
press fit
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Overall Length
0.080 inches maximum
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Precious Material
gold and silver
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Precious Material And Location
leads gold and leads silver