2N3424
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
2N3424
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
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Technical Characteristics
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Mounting Method
terminal
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Terminal Circle Diameter
0.190 inches minimum and 0.210 inches maximum
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Voltage Rating In Volts Per Characteristic
30.0 maximum collector to base voltage/static/emitter open all transistor and 30.0 maximum emitter to base voltage, static, collector open and 15.0 maximum breakdown voltage, collector to emitter, sustained
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Precious Material And Location
terminal surfaces gold
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Precious Material
gold
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Inclosure Material
metal
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Overall Diameter
0.352 inches nominal
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Internal Junction Configuration
npn all transistor
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Features Provided
burn in and gold plated leads
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Semiconductor Material
silicon all transistor
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Current Rating Per Characteristic
50.00 milliamperes maximum collector current, dc all transistor
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Power Rating Per Characteristic
300.0 milliwatts maximum total device dissipation all transistor
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Terminal Type And Quantity
6 uninsulated wire lead
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Overall Length
0.250 inches nominal
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Terminal Length
1.500 inches minimum
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Internal Configuration
junction contact all transistor
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Component Name And Quantity
2 transistor