313309-1
Semiconductor Devices and Associated Hardware
TRANSISTOR
313309-1
5961 - Semiconductor Devices and Associated Hardware
Texas Instruments Incorporated
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-18
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Electrode Internally-Electrically Connected To Case
collector
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Internal Junction Configuration
npn
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Mounting Method
terminal
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Power Rating Per Characteristic
1.8 watts maximum total device dissipation
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Precious Material And Location
terminal surfaces gold
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Test Data Document
00752-313309 drawing
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Inclosure Material
metal
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Terminal Length
0.500 inches minimum
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Internal Configuration
junction contact
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Terminal Circle Diameter
0.100 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to base voltage/static/emitter open and 30.0 maximum collector to emitter voltage/static/base open and 5.0 maximum emitter to base voltage, static, collector open
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Current Rating Per Characteristic
0.80 amperes maximum collector current, dc
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Precious Material
gold
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Terminal Type And Quantity
3 uninsulated wire lead