JAN2N1490

Semiconductor Devices and Associated Hardware

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JAN2N1490

5961-00-419-5367

5961 - Semiconductor Devices and Associated Hardware

Military Specifications

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum collector to base voltage/static/emitter open and 100.0 maximum collector to emitter voltage, dc with specified circuit between base and emitter and 55.0 maximum collector to emitter voltage/static/base open and 10.0 maximum emitter to base

  • ~1

    voltage, static, collector open

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Power Rating Per Characteristic

    75.0 watts small-signal input power, common-collector minimum

  • Mounting Method

    unthreaded hole

  • Inclosure Material

    metal

  • Overall Length

    1.572 inches maximum

  • Overall Height

    0.562 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Electrode Internally-Electrically Connected To Case

    collector

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Overall Width

    1.050 inches maximum

  • Semiconductor Material

    silicon

  • Transfer Ratio

    16.0 minimum static forward current transfer ratio, common-emitter

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

  • Current Rating Per Characteristic

    6.00 amperes source cutoff current maximum and 3.00 amperes source cutoff current minimum

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