200824-701

Semiconductor Devices and Associated Hardware

TRANSISTOR

200824-701

5961-00-419-5369

5961 - Semiconductor Devices and Associated Hardware

Bae Systems Information And

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Technical Characteristics

  • Internal Junction Configuration

    npn

  • Terminal Circle Diameter

    0.100 inches nominal

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum breakdown voltage,collector-to-base,emitter open and 40.0 maximum breakdown voltage,collector-to-emitter,base open and 3.2 maximum breakdown voltage,emitter-to-base,collector open

  • Terminal Type And Quantity

    4 uninsulated wire lead

  • Power Rating Per Characteristic

    200.0 milliwatts maximum collector power dissipation

  • Mounting Method

    terminal

  • Internal Configuration

    junction contact

  • Overall Diameter

    0.240 inches maximum

  • Terminal Length

    0.500 inches minimum

  • Overall Length

    0.210 inches maximum

  • Inclosure Material

    metal

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
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Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
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Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
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