VBE890/2N3350
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
VBE890/2N3350
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICES,UNITIZED
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Technical Characteristics
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Mounting Method
terminal
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Terminal Circle Diameter
0.200 inches nominal
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Overall Diameter
0.335 inches minimum and 0.370 inches maximum
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Semiconductor Material
silicon all transistor
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Current Rating Per Characteristic
30.00 milliamperes source cutoff current maximum all transistor
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Voltage Rating In Volts Per Characteristic
-60.0 maximum collector to base voltage/static/emitter open all transistor and -45.0 maximum collector to emitter voltage/static/base open all transistor and -6.0 maximum emitter to base voltage, static, collector open all transistor
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Terminal Length
0.500 inches minimum
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Component Name And Quantity
2 transistor
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Special Features
all transistor junction pattern arrangement: pnp
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Terminal Type And Quantity
6 uninsulated wire lead
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Inclosure Material
metal
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Power Rating Per Characteristic
0.6 watts small-signal input power, common-collector preset all transistor and 1.2 watts small-signal input power, common-collector absolute all transistor