9306-2001-051
Semiconductor Devices and Associated Hardware
TRANSISTOR
9306-2001-051
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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~1
collector open
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Voltage Rating In Volts Per Characteristic
40.0 maximum emitter to collector voltage, floating potential, dc with base biased in reverse direction with respect to the collector and 15.0 maximum breakdown voltage, collector-to-emitter, base open and 4.5 maximum emitter to base voltage, static,
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Electrode Internally-Electrically Connected To Case
collector
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.230 inches maximum
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Internal Junction Configuration
npn
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Internal Configuration
junction contact
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Features Provided
hermetically sealed case
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Current Rating Per Characteristic
200.00 milliamperes source cutoff current maximum
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Overall Length
0.210 inches maximum
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Semiconductor Material
silicon
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Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector preset
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
t0-18
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Terminal Length
0.500 inches minimum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Terminal Circle Diameter
0.100 inches nominal