2N4232
Semiconductor Devices and Associated Hardware
TRANSISTOR
2N4232
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Special Features
weapon system essential; junction pattern arrangement: npn
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Overall Height
0.340 inches maximum
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Overall Width
0.700 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-66
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Electrode Internally-Electrically Connected To Case
collector
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Criticality Code Justification
feat
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Voltage Rating In Volts Per Characteristic
60.0 maximum collector to base voltage/static/emitter open and 60.0 maximum collector to emitter voltage/static/base open and 5.0 maximum emitter to base voltage, static, collector open
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Internal Configuration
junction contact
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Current Rating Per Characteristic
1.00 amperes source cutoff current minimum and 3.00 amperes source cutoff current maximum
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Semiconductor Material
silicon
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Mounting Facility Quantity
2
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Terminal Type And Quantity
2 uninsulated wire lead and 1 case
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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End Item Identification
jforrestal class cv; iwo jima class lph; ticonderoga class cg (47); emory s. land class as; deep submergence systems programs (dssp); tarawa class lha; wasp class lhd; nimitz class cvn; sturgeon class ssn (637)
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Power Rating Per Characteristic
35.0 watts small-signal input power, common-collector absolute
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Mounting Method
unthreaded hole
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Inclosure Material
metal
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Specification/Standard Data
80131-release5676 professional/industrial association specification
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Overall Length
1.252 inches maximum