649A808H01

Technical Characteristics

• Power Rating Per Characteristic

  2.5 watts small-signal input power, common-collector absolute all transistor

• Semiconductor Material

  silicon all transistor

• Special Features

  junction pattern arrangement: npn

• Overall Width

  0.220 inches minimum and 0.280 inches maximum

• Features Provided

  hermetically sealed case

• Overall Length

  0.785 inches nominal

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Terminal Type And Quantity

  14 ribbon

• Component Name And Quantity

  4 transistor

• Mounting Method

  press fit

• Inclosure Material

  metal

• Voltage Rating In Volts Per Characteristic

  40.0 maximum collector to emitter voltage/static/base open all transistor and 60.0 maximum collector to emitter voltage, dc with base short-circuited to emitter all transistor and 5.0 maximum emitter to base voltage, dc all transistor

• Overall Height

  0.350 inches nominal