Q531755023

Semiconductor Devices and Associated Hardware

TRANSISTOR

Q531755023

5961-00-426-4954

5961 - Semiconductor Devices and Associated Hardware

Rheinmetall Air Defence Ag

TRANSISTOR

ACT NOW! SUBMIT A QUICK QUOTE.

Technical Characteristics

  • Precious Material And Location

    case and terminal surfaces gold

  • Precious Material

    gold

  • Features Provided

    gold plated leads and hermetically sealed case

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Overall Diameter

    0.061 inches maximum

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum collector to emitter voltage/static/base open and 7.0 maximum emitter-to-collector offset voltage

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius ambient air

  • Semiconductor Material

    silicon

  • Inclosure Material

    ceramic and glass and metal

  • Terminal Type And Quantity

    1 case and 2 ribbon

  • Overall Length

    0.115 inches maximum

  • Function For Which Designed

    phototransistor

  • Power Rating Per Characteristic

    50.0 milliwatts small-signal input power, common-collector absolute

  • Mounting Method

    press fit

Certified to
AS6081 Methods

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Providing Quality People

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